Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature
- IOM-CNR Laboratorio TASC, S. S. 14, Km. 163.5, I-34149 Trieste (Italy)
- Univ. Grenoble Alpes, F-38000 Grenoble (France)
- IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma (Italy)
ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.
- OSTI ID:
- 22494842
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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