Collective electronic behaviors of laterally heterostructured armchair MoS{sub 2}-NbS{sub 2} nanoribbons
- School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083 (China)
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)
Based on density functional theory, we have investigated the electronic properties of molybdenum disulfide-niobium disulfide hybrid nanoribbons (MoS{sub 2}-NbS{sub 2} NRs). It is found that the MoS{sub 2} edge, MoS{sub 2} center, NbS{sub 2} edge, and NbS{sub 2} center have distinct contributions to the collective electronic behaviors of MoS{sub 2}-NbS{sub 2} NRs. Its behavior, metallic or semiconductor, depends on whether the central area of NR contains NbS{sub 2} chain or not. This dependence has been also revealed in the electronic structures of NbS{sub 2}-MoS{sub 2}-NbS{sub 2} NR and MoS{sub 2}-NbS{sub 2}-MoS{sub 2} NR, of which the former is semiconductor and the latter is metal. In comparison with MoS{sub 2} NR of the same width, the hybrid has a different bandgap that was caused by the coupled effects between NbS{sub 2} edge and MoS{sub 2} edge. This fact makes MoS{sub 2}-NbS{sub 2} NRs a possible candidate for nanoelectronic devices based on heterostructured transition-metal dichalcogenide.
- OSTI ID:
- 22494796
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defect-induced states, defect-induced phase transition, and excitonic states in bent tungsten disulfide (WS2) nanoribbons: Density functional vs. many body theory
Spin transport properties of partially edge-hydrogenated MoS{sub 2} nanoribbon heterostructure