Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

Journal Article · Fri Aug 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928609· OSTI ID:22494773

Taboada, A. G.; Stumpf, W.; Kreiliger, T.; Känel, H. von ^[1]; Isa, F. ^[1]; Isella, G. ^[2]; Barthazy Meier, E. ^[3]

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1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland)
2. L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy)
3. Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.

• OSTI ID: 22494773
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DIFFUSION
EFFECTIVE MASS
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GERMANIUM
INDIUM
INDIUM ARSENIDES
LATTICE PARAMETERS
MORPHOLOGY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
SILICON
SPECTROSCOPY
STRAINS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION