Enhanced tunable magnetoresistance properties over a wide temperature range in epitaxial (La{sub 0.7}Sr{sub 0.3}MnO{sub 3}){sub 1−x}:(CeO{sub 2}){sub x} nanocomposites
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843 (United States)
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843 (United States)
Vertically aligned nanocomposite (VAN) (La{sub 0.7}Sr{sub 0.3}MnO{sub 3}){sub 1−x}:(CeO{sub 2}){sub x} (LSMO:CeO{sub 2}) thin films have been grown on SrTiO{sub 3} (001) substrates by pulsed laser deposition. Tunable magnetoresistance properties as well as microstructures are demonstrated in these VAN films by modulating the film composition (x = 0, 0.3, 0.4, 0.45, 0.5, and 0.55). The sample of x = 0.3 shows a large low-field magnetoresistance (LFMR) in a high temperature range, i.e., over 10% at the range of 280 K to 320 K under 1 T and with a peak value of ∼13.5% at 310 K. In addition, a vast enhancement of LFMR in a low temperature range of 20–150 K with peak of ≈34.3% at 45 K for 1 T could be achieved with x = 0.5. The enhanced LFMR properties can be attributed to both the phase boundary induced spin fluctuation and the magnetic tunneling effect through vertical ferromagnetic/insulator/ferromagnetic structures. The observed enhanced LFMR performance, especially at high temperatures, as well as its simple growth method, offers a great potential for LSMO:CeO{sub 2}nanocomposites to be used in spintronic devices in a large temperature range.
- OSTI ID:
- 22494735
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
CERIUM OXIDES
ENERGY BEAM DEPOSITION
EPITAXY
LANTHANUM COMPOUNDS
LASER RADIATION
MAGNETORESISTANCE
MICROSTRUCTURE
NANOCOMPOSITES
PULSED IRRADIATION
SPIN
STRONTIUM TITANATES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TUNNEL EFFECT