Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

Journal Article · Fri Aug 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928158· OSTI ID:22494707

Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. ^[1]; Tang, K.; Ahn, J.; McIntyre, P. C. ^[2]

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1. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

• OSTI ID: 22494707
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
ALUMINIUM OXIDES
ANNEALING
DEPOSITION
ELECTRIC POTENTIAL
FERMI LEVEL
GALLIUM
GALLIUM ARSENIDES
GOLD
INDIUM
INDIUM ARSENIDES
PLATINUM
WORK FUNCTIONS