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Title: Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Abstract

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

Authors:
 [1];  [1];  [2]
  1. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-713 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22494690
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; DAMAGE; ELECTRIC FIELDS; MAGNETIC FIELDS; MEMORY DEVICES; OPTIMIZATION; SPIN; STABILITY; TORQUE

Citation Formats

Song, Kyungmi, Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr, and Department of Materials Science and Engineering, Korea University, Seoul 136-713. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories. United States: N. p., 2015. Web. doi:10.1063/1.4928205.
Song, Kyungmi, Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr, & Department of Materials Science and Engineering, Korea University, Seoul 136-713. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories. United States. doi:10.1063/1.4928205.
Song, Kyungmi, Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr, and Department of Materials Science and Engineering, Korea University, Seoul 136-713. Fri . "Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories". United States. doi:10.1063/1.4928205.
@article{osti_22494690,
title = {Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories},
author = {Song, Kyungmi and Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr and Department of Materials Science and Engineering, Korea University, Seoul 136-713},
abstractNote = {We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.},
doi = {10.1063/1.4928205},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 118,
place = {United States},
year = {2015},
month = {8}
}