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Title: Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films

Abstract

Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
22494689
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CHARGE CARRIERS; FERMI LEVEL; FERRIMAGNETISM; HALL EFFECT; MAGNETIZATION; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; PEROVSKITE; THIN FILMS

Citation Formats

Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., Ren, L. Z., Wang, Y. J., Wang, G. L., and Li, S. W., E-mail: stslsw@mail.sysu.edu.cn. Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films. United States: N. p., 2015. Web. doi:10.1063/1.4928085.
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., Ren, L. Z., Wang, Y. J., Wang, G. L., & Li, S. W., E-mail: stslsw@mail.sysu.edu.cn. Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films. United States. https://doi.org/10.1063/1.4928085
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., Ren, L. Z., Wang, Y. J., Wang, G. L., and Li, S. W., E-mail: stslsw@mail.sysu.edu.cn. 2015. "Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films". United States. https://doi.org/10.1063/1.4928085.
@article{osti_22494689,
title = {Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films},
author = {Meng, M. and Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn and Zhou, W. Q. and Ren, L. Z. and Wang, Y. J. and Wang, G. L. and Li, S. W., E-mail: stslsw@mail.sysu.edu.cn},
abstractNote = {Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.},
doi = {10.1063/1.4928085},
url = {https://www.osti.gov/biblio/22494689}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 118,
place = {United States},
year = {Fri Aug 07 00:00:00 EDT 2015},
month = {Fri Aug 07 00:00:00 EDT 2015}
}