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Title: Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

Abstract

The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (R{sub d}) is dependent upon the substrate type. At the initial stage of Si film formation, R{sub d} on glass substrates increased with elapsed time and reached to a constant value. In contrast, R{sub d} on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (T{sub sub}) and hydrogen concentration (C{sub H2}) in the process atmosphere. For any given deposition time, it was found that an optimum C{sub H2} exists for a given T{sub sub} to realize the selective deposition of a Si film, and the optimum T{sub sub} value tends to increase with decreasing C{sub H2}. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si relatedmore » radicals (SiH{sub 2}, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.« less

Authors:
;  [1];  [2];  [1]
  1. Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22494664
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CONCENTRATION RATIO; DEFECTS; DEPOSITION; ELECTRON DIFFRACTION; EPITAXY; GLASS; HYDROGEN; PLASMA; PRESSURE RANGE MEGA PA 10-100; RAMAN EFFECT; RAMAN SPECTRA; SILICON; SPUTTERING; THIN FILMS

Citation Formats

Ohmi, Hiromasa, E-mail: ohmi@prec.eng.osaka-u.ac.jp, Yasutake, Kiyoshi, Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, and Kakiuchi, Hiroaki. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma. United States: N. p., 2015. Web. doi:10.1063/1.4926849.
Ohmi, Hiromasa, E-mail: ohmi@prec.eng.osaka-u.ac.jp, Yasutake, Kiyoshi, Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, & Kakiuchi, Hiroaki. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma. United States. doi:10.1063/1.4926849.
Ohmi, Hiromasa, E-mail: ohmi@prec.eng.osaka-u.ac.jp, Yasutake, Kiyoshi, Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, and Kakiuchi, Hiroaki. Tue . "Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma". United States. doi:10.1063/1.4926849.
@article{osti_22494664,
title = {Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma},
author = {Ohmi, Hiromasa, E-mail: ohmi@prec.eng.osaka-u.ac.jp and Yasutake, Kiyoshi and Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 and Kakiuchi, Hiroaki},
abstractNote = {The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (R{sub d}) is dependent upon the substrate type. At the initial stage of Si film formation, R{sub d} on glass substrates increased with elapsed time and reached to a constant value. In contrast, R{sub d} on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (T{sub sub}) and hydrogen concentration (C{sub H2}) in the process atmosphere. For any given deposition time, it was found that an optimum C{sub H2} exists for a given T{sub sub} to realize the selective deposition of a Si film, and the optimum T{sub sub} value tends to increase with decreasing C{sub H2}. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH{sub 2}, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.},
doi = {10.1063/1.4926849},
journal = {Journal of Applied Physics},
number = 4,
volume = 118,
place = {United States},
year = {Tue Jul 28 00:00:00 EDT 2015},
month = {Tue Jul 28 00:00:00 EDT 2015}
}
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