Phonon bottleneck in GaAs/Al{sub x}Ga{sub 1−x}As quantum dots
We report low-temperature photoluminescence measurements on highly-uniform GaAs/Al{sub x}Ga{sub 1−x}As quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
- OSTI ID:
- 22493906
- Journal Information:
- AIP Advances, Vol. 5, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
Phonon-assisted recombination and stimulated emission in quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures
Tunnel injection and phonon-assisted recombination in multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
Optical properties of low-strained In{sub x}Ga{sub 1-x}As/GaAs quantum dot structures at the two-dimensional-three-dimensional growth transition
Journal Article
·
Sat Mar 01 00:00:00 EST 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:22493906
+4 more
Tunnel injection and phonon-assisted recombination in multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition
Journal Article
·
Sat Sep 01 00:00:00 EDT 1979
· J. Appl. Phys.; (United States)
·
OSTI ID:22493906
+3 more
Optical properties of low-strained In{sub x}Ga{sub 1-x}As/GaAs quantum dot structures at the two-dimensional-three-dimensional growth transition
Journal Article
·
Sat Jul 01 00:00:00 EDT 2006
· Journal of Applied Physics
·
OSTI ID:22493906
+3 more