Structural and optical properties of axial silicon-germanium nanowire heterojunctions

Journal Article · Mon Dec 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4937345· OSTI ID:22493058

Wang, X.; Kamins, T. I. ^[1]; Wu, X.; Lockwood, D. J. ^[2]

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1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
2. National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

• OSTI ID: 22493058
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL DEFECTS
CRYSTAL GROWTH
GERMANIUM
GERMANIUM SILICIDES
HETEROJUNCTIONS
LASER RADIATION
NANOWIRES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
RAMAN EFFECT
SILICON
STRAINS
STRESSES
THERMAL CONDUCTIVITY
THERMAL EXPANSION