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Title: Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

Abstract

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.

Authors:
; ;  [1]
  1. School of VLSI Technology, IIEST, Shibpur, Howrah 711103 (India)
Publication Date:
OSTI Identifier:
22493030
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; HOLES; LAYERS; MOSFET; N-TYPE CONDUCTORS; ORIENTATION; PHOSPHORUS; P-TYPE CONDUCTORS; STACKING FAULTS

Citation Formats

Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com, Banerjee, L., Sengupta, A., and Rahaman, H. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor. United States: N. p., 2015. Web. doi:10.1063/1.4937148.
Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com, Banerjee, L., Sengupta, A., & Rahaman, H. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor. United States. https://doi.org/10.1063/1.4937148
Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com, Banerjee, L., Sengupta, A., and Rahaman, H. 2015. "Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor". United States. https://doi.org/10.1063/1.4937148.
@article{osti_22493030,
title = {Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor},
author = {Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com and Banerjee, L. and Sengupta, A. and Rahaman, H.},
abstractNote = {We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.},
doi = {10.1063/1.4937148},
url = {https://www.osti.gov/biblio/22493030}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 118,
place = {United States},
year = {Mon Dec 14 00:00:00 EST 2015},
month = {Mon Dec 14 00:00:00 EST 2015}
}