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Title: Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

Abstract

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

Authors:
;  [1];  [1];  [2]
  1. Center for Materials Research, Norfolk State University, Norfolk, Virginia 23504 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22492950
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CONCENTRATION RATIO; ENERGY BEAM DEPOSITION; LASER RADIATION; MORPHOLOGY; OXYGEN; PLASMA; PULSED IRRADIATION; SAPPHIRE; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; SURFACES; THIN FILMS; TRANSITION TEMPERATURE; VACANCIES; VANADIUM OXIDES

Citation Formats

Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, Scott, D. W., Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, and Department of Engineering, Norfolk State University, Norfolk, Virginia 23504. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition. United States: N. p., 2015. Web. doi:10.1063/1.4935814.
Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, Scott, D. W., Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, & Department of Engineering, Norfolk State University, Norfolk, Virginia 23504. Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition. United States. doi:10.1063/1.4935814.
Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, Scott, D. W., Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu, and Department of Engineering, Norfolk State University, Norfolk, Virginia 23504. Sat . "Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition". United States. doi:10.1063/1.4935814.
@article{osti_22492950,
title = {Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition},
author = {Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu and Scott, D. W. and Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu and Department of Engineering, Norfolk State University, Norfolk, Virginia 23504},
abstractNote = {We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.},
doi = {10.1063/1.4935814},
journal = {Journal of Applied Physics},
number = 19,
volume = 118,
place = {United States},
year = {Sat Nov 21 00:00:00 EST 2015},
month = {Sat Nov 21 00:00:00 EST 2015}
}