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Title: Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4935140· OSTI ID:22492887
; ;  [1];  [2]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d{sub 33} measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d{sub 33}, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d{sub 33} measurements on single crystal 0.67PbMg{sub 0.33}Nb{sub 0.67}O{sub 3}-0.33PbTiO{sub 3} and bulk PbZrTiO{sub 3}-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room temperature and 150 °C poled 5 μm and 10 μm features etched in 0.5 μm thick PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films doped with 1% Nb confirmed minimal substrate contributions to the effective d{sub 33,f}. Furthermore, enhanced d{sub 33,f} values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometry on finely patterned electrodes.

OSTI ID:
22492887
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English