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Title: Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films

Abstract

A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d{sub 33} measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d{sub 33}, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d{sub 33} measurements on single crystal 0.67PbMg{sub 0.33}Nb{sub 0.67}O{sub 3}-0.33PbTiO{sub 3} and bulk PbZrTiO{sub 3}-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room temperature and 150 °C poled 5 μm and 10 μm features etched in 0.5 μm thick PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films doped with 1% Nb confirmed minimal substrate contributions to the effective d{sub 33,f}. Furthermore, enhanced d{sub 33,f} values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometrymore » on finely patterned electrodes.« less

Authors:
; ;  [1];  [2]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22492887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CERAMICS; DOPED MATERIALS; ELECTRODES; INTERFEROMETERS; INTERFEROMETRY; LASERS; MICROSCOPES; MICROSCOPY; MONOCRYSTALS; PIEZOELECTRICITY; SPATIAL RESOLUTION; STRAINS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS

Citation Formats

Shetty, Smitha, E-mail: sus44@psu.edu, Yang, Jung In, Trolier-McKinstry, Susan, and Stitt, Joe. Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films. United States: N. p., 2015. Web. doi:10.1063/1.4935140.
Shetty, Smitha, E-mail: sus44@psu.edu, Yang, Jung In, Trolier-McKinstry, Susan, & Stitt, Joe. Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films. United States. doi:10.1063/1.4935140.
Shetty, Smitha, E-mail: sus44@psu.edu, Yang, Jung In, Trolier-McKinstry, Susan, and Stitt, Joe. 2015. "Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films". United States. doi:10.1063/1.4935140.
@article{osti_22492887,
title = {Quantitative and high spatial resolution d{sub 33} measurement of piezoelectric bulk and thin films},
author = {Shetty, Smitha, E-mail: sus44@psu.edu and Yang, Jung In and Trolier-McKinstry, Susan and Stitt, Joe},
abstractNote = {A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d{sub 33} measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d{sub 33}, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d{sub 33} measurements on single crystal 0.67PbMg{sub 0.33}Nb{sub 0.67}O{sub 3}-0.33PbTiO{sub 3} and bulk PbZrTiO{sub 3}-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room temperature and 150 °C poled 5 μm and 10 μm features etched in 0.5 μm thick PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} films doped with 1% Nb confirmed minimal substrate contributions to the effective d{sub 33,f}. Furthermore, enhanced d{sub 33,f} values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometry on finely patterned electrodes.},
doi = {10.1063/1.4935140},
journal = {Journal of Applied Physics},
number = 17,
volume = 118,
place = {United States},
year = 2015,
month =
}
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