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Title: Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

Abstract

Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmon theoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes.

Authors:
;  [1]; ; ;  [2];  [2];  [3]
  1. Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060 (United States)
  2. Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States)
  3. Department of Electrical and Computer Engineering, University of Alabama in Huntsville, 301 Sparkman Drive, Huntsville, Alabama 35899 (United States)
Publication Date:
OSTI Identifier:
22492885
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 17; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFRACTION; DOPED MATERIALS; FILMS; GALLIUM; HOLES; LANGMUIR FREQUENCY; LAYERS; OPTICAL PROPERTIES; RESONANCE; SILICON; SURFACES; TUNNEL EFFECT; WAVELENGTHS; ZINC OXIDES

Citation Formats

Nader, Nima, Vangala, Shivashankar, Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433, Hendrickson, Joshua R., Leedy, Kevin D., Cleary, Justin W., Look, David C., Wyle Laboratories, Inc., 2601 Mission Point Blvd., Suite 300, Dayton, Ohio 45435, Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, and Guo, Junpeng. Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films. United States: N. p., 2015. Web. doi:10.1063/1.4934875.
Nader, Nima, Vangala, Shivashankar, Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433, Hendrickson, Joshua R., Leedy, Kevin D., Cleary, Justin W., Look, David C., Wyle Laboratories, Inc., 2601 Mission Point Blvd., Suite 300, Dayton, Ohio 45435, Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, & Guo, Junpeng. Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films. United States. doi:10.1063/1.4934875.
Nader, Nima, Vangala, Shivashankar, Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433, Hendrickson, Joshua R., Leedy, Kevin D., Cleary, Justin W., Look, David C., Wyle Laboratories, Inc., 2601 Mission Point Blvd., Suite 300, Dayton, Ohio 45435, Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, and Guo, Junpeng. Sat . "Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films". United States. doi:10.1063/1.4934875.
@article{osti_22492885,
title = {Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films},
author = {Nader, Nima and Vangala, Shivashankar and Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 and Hendrickson, Joshua R. and Leedy, Kevin D. and Cleary, Justin W. and Look, David C. and Wyle Laboratories, Inc., 2601 Mission Point Blvd., Suite 300, Dayton, Ohio 45435 and Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 and Guo, Junpeng},
abstractNote = {Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmon theoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes.},
doi = {10.1063/1.4934875},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 118,
place = {United States},
year = {2015},
month = {11}
}