Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

Wu, Xiaoming; Liu, Junlin; Jiang, Fengyi

doi:10.1063/1.4934503

Title: Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

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Abstract

The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.

Authors:

Wu, Xiaoming; Liu, Junlin; Jiang, Fengyi ^[1]

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)

Publication Date:: Wed Oct 28 00:00:00 EDT 2015

OSTI Identifier:: 22492863

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DISLOCATIONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; QUANTUM WELLS; SPECTROSCOPY; WAVELENGTHS

Citation Formats


                    Wu, Xiaoming, Liu, Junlin, and Jiang, Fengyi. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4934503.

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                    Wu, Xiaoming, Liu, Junlin, & Jiang, Fengyi. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes.  United States.  https://doi.org/10.1063/1.4934503

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                    Wu, Xiaoming, Liu, Junlin, and Jiang, Fengyi. 2015.  
        "Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes".  United States.  https://doi.org/10.1063/1.4934503.

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@article{osti_22492863,

  title        = {Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes},

  author       = {Wu, Xiaoming and Liu, Junlin and Jiang, Fengyi},

  abstractNote = {The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.},

  doi          = {10.1063/1.4934503},

  url          = {https://www.osti.gov/biblio/22492863},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 16,

  volume       = 118,

  place        = {United States},

  year         = {Wed Oct 28 00:00:00 EDT 2015},

  month        = {Wed Oct 28 00:00:00 EDT 2015}

}

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