Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature
- Center for Supports to Research and Education Activities, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 μm was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 °C.
- OSTI ID:
- 22492819
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm
Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells