Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

Journal Article · Mon Feb 15 00:00:00 EST 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4941702· OSTI ID:22492430

Nihtianov, S. ^[1]

---

1. Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

• OSTI ID: 22492430
• Journal Information: AIP Advances, Vol. 6, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
BORANES
BORON
BORON HYDRIDES
CHEMICAL VAPOR DEPOSITION
DATA
DIFFUSION LENGTH
LAYERS
LOADING
SILICON
SURFACES