Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology & Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)
- Department of Physics, Hangzhou Normal University, Hangzhou 310036 (China)
- Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)
The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial Ni{sub x}Fe{sub 1−x} thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K{sub 1}. When nickel content x decreasing, both b and K{sub 1} vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate Ni{sub x}Fe{sub 1−x} has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K{sub 1}. This remarkable correlation between b and K{sub 1} can be attributed to the effect of band filling near the Fermi surface.
- OSTI ID:
- 22492395
- Journal Information:
- AIP Advances, Vol. 6, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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