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Title: Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4932147· OSTI ID:22492381
; ;  [1]; ;  [2]
  1. Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid (Spain)
  2. ISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid (Spain)

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.

OSTI ID:
22492381
Journal Information:
AIP Advances, Vol. 5, Issue 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English