Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Journal Article · Tue Dec 15 00:00:00 EST 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4938548· OSTI ID:22492246

Yoo, Jongmyung; Woo, Jiyong; Song, Jeonghwan; Hwang, Hyunsang ^[1]

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1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784 (Korea, Republic of)

The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼10{sup 5}) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

• OSTI ID: 22492246
• Journal Information: AIP Advances, Vol. 5, Issue 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ATOMS
DISSOLUTION
FILAMENTS
GOLD
HYDROGEN
SILICON
SILVER IONS
SOLID ELECTROLYTES