skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

Abstract

Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.

Authors:
; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22492176
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CHARGE CARRIERS; CRYSTAL GROWTH; GALLIUM NITRIDES; HEAT SINKS; POTENTIALS; QUANTUM WELLS; RECOMBINATION; SCREW DISLOCATIONS

Citation Formats

Funato, Mitsuru, E-mail: funato@kuee.kyoto-u.ac.jp, Banal, Ryan G., and Kawakami, Yoichi. Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells. United States: N. p., 2015. Web. doi:10.1063/1.4935567.
Funato, Mitsuru, E-mail: funato@kuee.kyoto-u.ac.jp, Banal, Ryan G., & Kawakami, Yoichi. Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells. United States. doi:10.1063/1.4935567.
Funato, Mitsuru, E-mail: funato@kuee.kyoto-u.ac.jp, Banal, Ryan G., and Kawakami, Yoichi. Sun . "Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells". United States. doi:10.1063/1.4935567.
@article{osti_22492176,
title = {Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells},
author = {Funato, Mitsuru, E-mail: funato@kuee.kyoto-u.ac.jp and Banal, Ryan G. and Kawakami, Yoichi},
abstractNote = {Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.},
doi = {10.1063/1.4935567},
journal = {AIP Advances},
issn = {2158-3226},
number = 11,
volume = 5,
place = {United States},
year = {2015},
month = {11}
}