Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918126· OSTI ID:22490536

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Kumar, K. Rajeev ^[1]

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1. Department of Instrumentation, Cochin University of Science and Technology, Cochin-682022 (India)

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

• OSTI ID: 22490536
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTRA
ANNEALING
BUFFERS
DIFFUSION
EMISSION SPECTRA
ENERGY GAP
LAYERS
PYROLYSIS
SOLAR CELLS
SPRAYS
THIN FILMS
TIN
ZINC OXIDES