Role of Ni doping on transport properties of ZnO thin films

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918074· OSTI ID:22490505

Agrawal, Arpana; Sen, Pratima ^[1]

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1. Laser Bhawan, School Of Physics, Devi Ahilaya University Takshashila Campus Khandwa Road Indore, Indore-452001 (India)

Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO results in decrease in magnitude of negative MR.

• OSTI ID: 22490505
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ENERGY BEAM DEPOSITION
LASER RADIATION
MAGNETORESISTANCE
NICKEL COMPOUNDS
OPACITY
PULSED IRRADIATION
TEMPERATURE DEPENDENCE
THIN FILMS
VALENCE
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES