Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films
Abstract
In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
- Authors:
-
- ITER, SOA University, Bhubaneswar-751030 (India)
- Department of Bio-Nanotechnology, Gachon University, Gyeonggi-do, Republic of Korea, 461701 (Korea, Republic of)
- Department of Materials Science and Engineering, Yonsei University, Seoul, Republic of Korea, 120749 (Korea, Republic of)
- Publication Date:
- OSTI Identifier:
- 22490431
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HAFNIUM OXIDES; LEAKAGE CURRENT; MONOCLINIC LATTICES; P-TYPE CONDUCTORS; RADIOWAVE RADIATION; SILICON; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION
Citation Formats
Das, K. C., Ghosh, S. P., Tripathy, N., Kar, J. P., E-mail: karjp@nitrkl.ac.in, Bose, G., Lee, T., and Myoung, J. M. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. United States: N. p., 2015.
Web. doi:10.1063/1.4917978.
Das, K. C., Ghosh, S. P., Tripathy, N., Kar, J. P., E-mail: karjp@nitrkl.ac.in, Bose, G., Lee, T., & Myoung, J. M. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films. United States. https://doi.org/10.1063/1.4917978
Das, K. C., Ghosh, S. P., Tripathy, N., Kar, J. P., E-mail: karjp@nitrkl.ac.in, Bose, G., Lee, T., and Myoung, J. M. 2015.
"Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films". United States. https://doi.org/10.1063/1.4917978.
@article{osti_22490431,
title = {Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films},
author = {Das, K. C. and Ghosh, S. P. and Tripathy, N. and Kar, J. P., E-mail: karjp@nitrkl.ac.in and Bose, G. and Lee, T. and Myoung, J. M.},
abstractNote = {In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.},
doi = {10.1063/1.4917978},
url = {https://www.osti.gov/biblio/22490431},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1665,
place = {United States},
year = {Wed Jun 24 00:00:00 EDT 2015},
month = {Wed Jun 24 00:00:00 EDT 2015}
}
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