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Title: Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film

Abstract

Thin film sample of Zn{sub 0.85}Mg{sub 0.15}O was prepared on Si (100) substrate by pulsed laser deposition and its structural, electronic, magnetic and ferroelectric properties were investigated. The Zn{sub 0.85}Mg{sub 0.15}O thin film sample is found to show room temperature multiferroic properties; suitable for device fabrication.

Authors:
;  [1]; ; ; ;  [2]
  1. Department of Physics and Materials Science & Engineering, Jaypee Institute of Information Technology, Noida-201307 (India)
  2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore-452001 (India)
Publication Date:
OSTI Identifier:
22490426
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ENERGY BEAM DEPOSITION; FABRICATION; FERROELECTRIC MATERIALS; LASER RADIATION; MAGNESIUM OXIDES; PULSED IRRADIATION; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC COMPOUNDS

Citation Formats

Devi, Vanita, Joshi, B. C., Kumar, Manish, Wadikar, A. D., Choudhary, R. J., and Phase, D. M. Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film. United States: N. p., 2015. Web. doi:10.1063/1.4917969.
Devi, Vanita, Joshi, B. C., Kumar, Manish, Wadikar, A. D., Choudhary, R. J., & Phase, D. M. Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film. United States. https://doi.org/10.1063/1.4917969
Devi, Vanita, Joshi, B. C., Kumar, Manish, Wadikar, A. D., Choudhary, R. J., and Phase, D. M. 2015. "Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film". United States. https://doi.org/10.1063/1.4917969.
@article{osti_22490426,
title = {Electronic and multiferroic properties of Zn{sub 0.85}Mg{sub 0.15}O thin film},
author = {Devi, Vanita and Joshi, B. C. and Kumar, Manish and Wadikar, A. D. and Choudhary, R. J. and Phase, D. M.},
abstractNote = {Thin film sample of Zn{sub 0.85}Mg{sub 0.15}O was prepared on Si (100) substrate by pulsed laser deposition and its structural, electronic, magnetic and ferroelectric properties were investigated. The Zn{sub 0.85}Mg{sub 0.15}O thin film sample is found to show room temperature multiferroic properties; suitable for device fabrication.},
doi = {10.1063/1.4917969},
url = {https://www.osti.gov/biblio/22490426}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1665,
place = {United States},
year = {Wed Jun 24 00:00:00 EDT 2015},
month = {Wed Jun 24 00:00:00 EDT 2015}
}