Characterization of silver photodiffusion in Ge{sub 8}Sb{sub 2}Te{sub 11} thin films
- Department of Physics, DAV University, Sarmastpur, Jalandhar-144012 (India)
- Department of Physics, Guru Nanak Dev University, Amritsar-143005 (India)
Silver-doped amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films have been prepared by photodiffusion at room-temperature; the Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer was deposited by vacuum thermal evaporation. Photodiffusion of Ag into the amorphous Ge{sub 8}Sb{sub 2}Te{sub 11} thin films has been carried out by illuminating the prepared Ge{sub 8}Sb{sub 2}Te{sub 11}/Ag bilayer with halogen lamp. The photodiffused silver depth profile was traced by means of time of flight secondary ion mass spectroscopy. The film remains amorphous after Ag photodiffusion. The crystallization temperature of the films was evaluated by temperature dependent sheet resistance measurement. The amorphous nature and crystalline phases of the films have been identified by using X-ray diffraction.
- OSTI ID:
- 22490399
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANTIMONIDES
CRYSTALLIZATION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EVAPORATION
GERMANIUM TELLURIDES
ION MICROPROBE ANALYSIS
LAYERS
LIGHT BULBS
MASS SPECTROSCOPY
SILVER
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIME-OF-FLIGHT METHOD
X-RAY DIFFRACTION