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Title: Influence of Zr{sup 4+} doping on structural and electrical properties of SrBi{sub 4}Ti{sub 4}O{sub 15} ceramic

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4917594· OSTI ID:22490190
 [1];  [2]
  1. Department of Physics, National Institute of Technology, Rourkela-769008 (India)
  2. Department of Physics, C.V. Raman College of Engineering, Bhubaneswar-752054 (India)

This article reports a systematic study of doping effects on the structural and electrical properties of layer structured strontium bismuth titanate ceramic. In this study monophasic SrBi{sub 4}Ti{sub 4-x}Zr{sub x}O{sub 15} with x=0.00, 0.05, 0.10, 0.15, 0.20, 0.25 ceramics were synthesized from the solid-state reaction route. X-ray diffraction analysis shows that the Zr-modified SBT ceramics have a pure four-layer Aurivillius phase structure. Dielectric properties revealed that the diffuseness of phase transition increases where as corresponding permittivity value decrease with increasing Zr content. Piezoelectric properties of SBTZ ceramics were improved by the modification of Zirconium ion. Moreover, the reason behind for improvement of piezoelectric properties of modified SBTZ ceramics was also discussed.

OSTI ID:
22490190
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English