Formation of Si{sup 1+} in the early stages of the oxidation of the Si[001] 2 × 1 surface

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4936336· OSTI ID:22489788

Herrera-Gomez, Alberto ^[1]; Aguirre-Tostado, Francisco-Servando ^[2]; Pianetta, Piero ^[3]

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1. CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico)
2. Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600 (Mexico)
3. SLAC National Accelerator Center, Menlo Park, California 94025 (United States)

The early stages of the oxidation of the Si[001] 2 × 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si{sup 1+} is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer.

• OSTI ID: 22489788
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ATOMS
DIMERS
OXIDATION
OXYGEN
PHOTOELECTRON SPECTROSCOPY
SIGNALS
SPECTRA
SURFACES
SYNCHROTRON RADIATION