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Title: Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

Abstract

In this study, zinc oxide (ZnO) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system. Prior to deposition, the substrates were treated with hydrogen peroxide (H{sub 2}O{sub 2}) in order to increase nucleation on the initial sapphire surface and, thus, enhance the quality of deposited ZnO films. Furthermore, x-ray diffraction spectroscopy measurements indicated that the crystallinity of ZnO films was considerably enhanced by H{sub 2}O{sub 2} pretreatment, with the strongest (002) diffraction peak occurring for the film pretreated with H{sub 2}O{sub 2} for 60 min. X-ray photoelectron spectroscopy also was used, and the results indicated that a high number of Zn–O bonds was generated in ZnO films pretreated appropriately with H{sub 2}O{sub 2}. The ZnO film deposited on a sapphire substrate with H{sub 2}O{sub 2} pretreatment for 60 min was applied to metal–semiconductor–metal ultraviolet photodetectors (MSM-UPDs) as an active layer. The fabricated ZnO MSM-UPDs showed improvements in dark current and ultraviolet–visible rejection ratios (0.27 μA and 1.06 × 10{sup 3}, respectively) compared to traditional devices.

Authors:
;  [1];  [2]
  1. Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)
  2. Metal Industries Research and Development Centre, Kaohsiung 82151, Taiwan (China)
Publication Date:
OSTI Identifier:
22489744
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; FILMS; HYDROGEN PEROXIDE; NUCLEATION; PHOTODETECTORS; SAPPHIRE; SUBSTRATES; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Lin, Yu-Chang, Lee, Hsin-Ying, and Lee, Tsung-Hsin. Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition. United States: N. p., 2016. Web. doi:10.1116/1.4933169.
Lin, Yu-Chang, Lee, Hsin-Ying, & Lee, Tsung-Hsin. Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition. United States. doi:10.1116/1.4933169.
Lin, Yu-Chang, Lee, Hsin-Ying, and Lee, Tsung-Hsin. Fri . "Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition". United States. doi:10.1116/1.4933169.
@article{osti_22489744,
title = {Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition},
author = {Lin, Yu-Chang and Lee, Hsin-Ying and Lee, Tsung-Hsin},
abstractNote = {In this study, zinc oxide (ZnO) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system. Prior to deposition, the substrates were treated with hydrogen peroxide (H{sub 2}O{sub 2}) in order to increase nucleation on the initial sapphire surface and, thus, enhance the quality of deposited ZnO films. Furthermore, x-ray diffraction spectroscopy measurements indicated that the crystallinity of ZnO films was considerably enhanced by H{sub 2}O{sub 2} pretreatment, with the strongest (002) diffraction peak occurring for the film pretreated with H{sub 2}O{sub 2} for 60 min. X-ray photoelectron spectroscopy also was used, and the results indicated that a high number of Zn–O bonds was generated in ZnO films pretreated appropriately with H{sub 2}O{sub 2}. The ZnO film deposited on a sapphire substrate with H{sub 2}O{sub 2} pretreatment for 60 min was applied to metal–semiconductor–metal ultraviolet photodetectors (MSM-UPDs) as an active layer. The fabricated ZnO MSM-UPDs showed improvements in dark current and ultraviolet–visible rejection ratios (0.27 μA and 1.06 × 10{sup 3}, respectively) compared to traditional devices.},
doi = {10.1116/1.4933169},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 1,
volume = 34,
place = {United States},
year = {2016},
month = {1}
}