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Title: Low-temperature atomic layer deposition of copper(II) oxide thin films

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.4933089· OSTI ID:22489743
; ; ; ;  [1]; ;  [2]; ;  [3]
  1. Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland)
  2. Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki (Finland)
  3. Chair of Inorganic Chemistry II, Ruhr-University Bochum, Universitätsstrasse 150, 44780 Bochum (Germany)

Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap){sub 2}] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

OSTI ID:
22489743
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
Country of Publication:
United States
Language:
English