Low-temperature atomic layer deposition of copper(II) oxide thin films
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland)
- Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki (Finland)
- Chair of Inorganic Chemistry II, Ruhr-University Bochum, Universitätsstrasse 150, 44780 Bochum (Germany)
Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap){sub 2}] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.
- OSTI ID:
- 22489743
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 1; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
COPPER OXIDES
DEPOSITION
FIELD EMISSION
IMPURITIES
LAYERS
POLYCRYSTALS
REFLECTIVITY
SCANNING ELECTRON MICROSCOPY
SPECTROPHOTOMETRY
THIN FILMS
TIME-OF-FLIGHT METHOD
X RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
COPPER OXIDES
DEPOSITION
FIELD EMISSION
IMPURITIES
LAYERS
POLYCRYSTALS
REFLECTIVITY
SCANNING ELECTRON MICROSCOPY
SPECTROPHOTOMETRY
THIN FILMS
TIME-OF-FLIGHT METHOD
X RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY