Intrinsic magnetic refrigeration of a single electron transistor

Journal Article · Mon Feb 01 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941289· OSTI ID:22489412

Ciccarelli, C.; Ferguson, A. J. ^[1]; Campion, R. P.; Gallagher, B. L. ^[2]

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1. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
2. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

• OSTI ID: 22489412
• Journal Information: Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
ALUMINIUM
CRYOSTATS
DOPED MATERIALS
ELECTRONS
EVAPORATION
IMPURITIES
REFRIGERATION
TRANSISTORS