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Title: Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

Abstract

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

Authors:
; ; ;  [1];  [2]
  1. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)
  2. Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)
Publication Date:
OSTI Identifier:
22489318
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COHERENCE LENGTH; FLUCTUATIONS; MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; TITANIUM OXIDES; ZINC OXIDES

Citation Formats

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Joshi, M. P., Kukreja, L. M., and Das, Gangadhar. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition. United States: N. p., 2016. Web. doi:10.1063/1.4939926.
Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Joshi, M. P., Kukreja, L. M., & Das, Gangadhar. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition. United States. doi:10.1063/1.4939926.
Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in, Joshi, M. P., Kukreja, L. M., and Das, Gangadhar. Mon . "Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition". United States. doi:10.1063/1.4939926.
@article{osti_22489318,
title = {Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition},
author = {Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in and Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in and Joshi, M. P. and Kukreja, L. M. and Das, Gangadhar},
abstractNote = {Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.},
doi = {10.1063/1.4939926},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 108,
place = {United States},
year = {2016},
month = {1}
}