Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Si, Weidong; Zhang, Cheng; Wu, Lijun; Ozaki, Toshinori; Gu, Genda; Li, Qiang

doi:10.1063/1.4929815

Title: Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Journal Article · Mon Aug 31 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929815· OSTI ID:22489203

Si, Weidong; Zhang, Cheng; Wu, Lijun; Ozaki, Toshinori; Gu, Genda; Li, Qiang ^[1]

Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

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OSTI ID:: 22489203

Journal Information:: Applied Physics Letters, Vol. 107, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951

Country of Publication:: United States

Language:: English

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