In situ plasma enhanced atomic layer deposition half cycle study of Al{sub 2}O{sub 3} on AlGaN/GaN high electron mobility transistors
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al{sub 2}O{sub 3} on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H{sub 2}O precursor. The remote O{sub 2} plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al{sub 2}O{sub 3} growth on AlGaN/GaN devices.
- OSTI ID:
- 22489148
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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