skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Influence of silver doping on surface defect characteristics of TiO{sub 2}

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4929233· OSTI ID:22488828
 [1]
  1. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)

In the present work, we proposed a novel silver doped TiO{sub 2} polyethylene conjugated films to improve the performance of DSSCs. Oxides nanoparticles dispersed in a semiconducting polymer form the active layer of a solar cell. Localized surface plasmon resonance effects associated with spatially dispersed silver (Ag) nanoparticles can be exploited to enhance the light-harvesting efficiency, the photocurrent density and the overall light-to electrical-energy-conversion efficiency of high-area DSSCs based TiO{sub 2} photoanodes. Silver doped titanium dioxide (TiO{sub 2}:Ag) is prepared by sol-gel technique and deposited on fluorine doped indium oxide (FTO) coated glass substrates by using doctor blade technique at 550°C from aqueous solutions of titanium butoxide and silver nitrate precursors. The effect of Ag doping on electrical properties of films is studied. The Ag-TiO{sub 2} films are about 548 times more photosensitive as compare to the pure TiO{sub 2} sample. The presence of metallic Ag nanoparticles and oxygen vacancy on the surface of TiO{sub 2} nanoparticles promotes the separation of photogenerated electron-hole pairs and thus enhances the photosensitivity. Photoconduction mechanism of all prepared samples is investigated by performing transient photoconductivity measurements on TiO{sub 2} and Ag-TiO{sub 2} films keeping intensity of light constant.

OSTI ID:
22488828
Journal Information:
AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English