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Title: Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Abstract

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

Authors:
 [1];  [2]; ;  [1]; ; ; ;  [3]; ;  [1];  [4]
  1. National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
  2. (Japan)
  3. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan)
  4. (China)
Publication Date:
OSTI Identifier:
22488579
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODOLUMINESCENCE; DENSITY; DIFFUSION; DISLOCATIONS; EPITAXY; GALLIUM NITRIDES; INDIUM; LAYERS; LIGHT EMITTING DIODES; SAPPHIRE; SPATIAL DISTRIBUTION; SUBSTRATES; SURFACES; WAVELENGTHS

Citation Formats

Yin, Yao, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Sun, Huabin, Chen, Peng, Sang, Liwen, Dierre, Benjamin, Sumiya, Masatomo, Sekiguchi, Takashi, E-mail: sekiguchi.takashi@nims.go.jp, Zheng, Youdou, Shi, Yi, E-mail: yshi@nju.edu.cn, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures. United States: N. p., 2015. Web. doi:10.1063/1.4921207.
Yin, Yao, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Sun, Huabin, Chen, Peng, Sang, Liwen, Dierre, Benjamin, Sumiya, Masatomo, Sekiguchi, Takashi, E-mail: sekiguchi.takashi@nims.go.jp, Zheng, Youdou, Shi, Yi, E-mail: yshi@nju.edu.cn, & Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures. United States. doi:10.1063/1.4921207.
Yin, Yao, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Sun, Huabin, Chen, Peng, Sang, Liwen, Dierre, Benjamin, Sumiya, Masatomo, Sekiguchi, Takashi, E-mail: sekiguchi.takashi@nims.go.jp, Zheng, Youdou, Shi, Yi, E-mail: yshi@nju.edu.cn, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093. Fri . "Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures". United States. doi:10.1063/1.4921207.
@article{osti_22488579,
title = {Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures},
author = {Yin, Yao and National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 and Sun, Huabin and Chen, Peng and Sang, Liwen and Dierre, Benjamin and Sumiya, Masatomo and Sekiguchi, Takashi, E-mail: sekiguchi.takashi@nims.go.jp and Zheng, Youdou and Shi, Yi, E-mail: yshi@nju.edu.cn and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093},
abstractNote = {The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.},
doi = {10.1063/1.4921207},
journal = {AIP Advances},
issn = {2158-3226},
number = 5,
volume = 5,
place = {United States},
year = {2015},
month = {5}
}