Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method
Abstract
Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.
- Authors:
-
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050 (China)
- Publication Date:
- OSTI Identifier:
- 22488542
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ABSORPTION; ALUMINIUM; CONCENTRATION RATIO; CRYSTALS; DOPED MATERIALS; FLUORESCENCE; IMPURITIES; PEAKS; SILICON CARBIDES; WAVELENGTHS
Citation Formats
Liu, Xi, E-mail: liuxi@mail.sic.ac.cn, Zhuo, Shi-Yi, Gao, Pan, Huang, Wei, Yan, Cheng-Feng, and Shi, Er-Wei. Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method. United States: N. p., 2015.
Web. doi:10.1063/1.4919012.
Liu, Xi, E-mail: liuxi@mail.sic.ac.cn, Zhuo, Shi-Yi, Gao, Pan, Huang, Wei, Yan, Cheng-Feng, & Shi, Er-Wei. Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method. United States. doi:10.1063/1.4919012.
Liu, Xi, E-mail: liuxi@mail.sic.ac.cn, Zhuo, Shi-Yi, Gao, Pan, Huang, Wei, Yan, Cheng-Feng, and Shi, Er-Wei. Wed .
"Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method". United States.
doi:10.1063/1.4919012.
@article{osti_22488542,
title = {Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method},
author = {Liu, Xi, E-mail: liuxi@mail.sic.ac.cn and Zhuo, Shi-Yi and Gao, Pan and Huang, Wei and Yan, Cheng-Feng and Shi, Er-Wei},
abstractNote = {Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.},
doi = {10.1063/1.4919012},
journal = {AIP Advances},
number = 4,
volume = 5,
place = {United States},
year = {Wed Apr 15 00:00:00 EDT 2015},
month = {Wed Apr 15 00:00:00 EDT 2015}
}
DOI: 10.1063/1.4919012
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Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method
Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitatively characterizing defects. In this study, the use of Synchrotron White Beam X-ray Topography (SWBXT) to determine the line directions of threading dislocations in 4H–SiC axial slices (sample cut parallel to the growth axis from the boule) is demonstrated. This technique is based on the fact that the projected line directions of dislocations on different reflections are different. Another technique also discussed is the determination of the absolute Burgers vectorsmore »