Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
- Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Ultrathin-barrier AlN/GaN heterostructures were grown on sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD) using indium as a surfactant at a dramatically reduced growth temperature of 830 °C. Upon optimization of growth parameters, an electron mobility of 1398 cm{sup 2}/V s together with a two-dimensional-electron-gas density of 1.3 × 10{sup 13 }cm{sup −2} was obtained for a 4 nm thick AlN barrier. The grown structures featured well-ordered parallel atomic steps with a root-mean-square roughness of 0.15 nm in a 5 × 5 μm{sup 2} area revealed by atomic-force-microscopic image. Finally, the potential of such structures for device application was demonstrated by fabricating and testing under dc operation AlN/GaN high-electron-mobility transistors. These results indicate that this low temperature PMOCVD growth technique is promising for the fabrication of GaN-based electronic devices.
- OSTI ID:
- 22486394
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer
Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
ELECTRON GAS
ELECTRON MOBILITY
ELECTRONIC EQUIPMENT
FABRICATION
GALLIUM NITRIDES
INDIUM
ORGANOMETALLIC COMPOUNDS
PULSES
ROUGHNESS
SAPPHIRE
SUBSTRATES
SURFACTANTS
TESTING
TRANSISTORS
TWO-DIMENSIONAL SYSTEMS