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Title: Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Abstract

Ultrathin-barrier AlN/GaN heterostructures were grown on sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD) using indium as a surfactant at a dramatically reduced growth temperature of 830 °C. Upon optimization of growth parameters, an electron mobility of 1398 cm{sup 2}/V s together with a two-dimensional-electron-gas density of 1.3 × 10{sup 13 }cm{sup −2} was obtained for a 4 nm thick AlN barrier. The grown structures featured well-ordered parallel atomic steps with a root-mean-square roughness of 0.15 nm in a 5 × 5 μm{sup 2} area revealed by atomic-force-microscopic image. Finally, the potential of such structures for device application was demonstrated by fabricating and testing under dc operation AlN/GaN high-electron-mobility transistors. These results indicate that this low temperature PMOCVD growth technique is promising for the fabrication of GaN-based electronic devices.

Authors:
; ;  [1]
  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22486394
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FABRICATION; GALLIUM NITRIDES; INDIUM; ORGANOMETALLIC COMPOUNDS; PULSES; ROUGHNESS; SAPPHIRE; SUBSTRATES; SURFACTANTS; TESTING; TRANSISTORS; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Xue, JunShuai, E-mail: junshuaixue@hotmail.com, Zhang, JinCheng, E-mail: jchzhang@xidian.edu.cn, and Hao, Yue. Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition. United States: N. p., 2015. Web. doi:10.1063/1.4927743.
Xue, JunShuai, E-mail: junshuaixue@hotmail.com, Zhang, JinCheng, E-mail: jchzhang@xidian.edu.cn, & Hao, Yue. Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition. United States. doi:10.1063/1.4927743.
Xue, JunShuai, E-mail: junshuaixue@hotmail.com, Zhang, JinCheng, E-mail: jchzhang@xidian.edu.cn, and Hao, Yue. Mon . "Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition". United States. doi:10.1063/1.4927743.
@article{osti_22486394,
title = {Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition},
author = {Xue, JunShuai, E-mail: junshuaixue@hotmail.com and Zhang, JinCheng, E-mail: jchzhang@xidian.edu.cn and Hao, Yue},
abstractNote = {Ultrathin-barrier AlN/GaN heterostructures were grown on sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD) using indium as a surfactant at a dramatically reduced growth temperature of 830 °C. Upon optimization of growth parameters, an electron mobility of 1398 cm{sup 2}/V s together with a two-dimensional-electron-gas density of 1.3 × 10{sup 13 }cm{sup −2} was obtained for a 4 nm thick AlN barrier. The grown structures featured well-ordered parallel atomic steps with a root-mean-square roughness of 0.15 nm in a 5 × 5 μm{sup 2} area revealed by atomic-force-microscopic image. Finally, the potential of such structures for device application was demonstrated by fabricating and testing under dc operation AlN/GaN high-electron-mobility transistors. These results indicate that this low temperature PMOCVD growth technique is promising for the fabrication of GaN-based electronic devices.},
doi = {10.1063/1.4927743},
journal = {Applied Physics Letters},
number = 4,
volume = 107,
place = {United States},
year = {Mon Jul 27 00:00:00 EDT 2015},
month = {Mon Jul 27 00:00:00 EDT 2015}
}