Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

Journal Article · Mon Jul 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4927657· OSTI ID:22486371

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob ^[1]

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1. Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

• OSTI ID: 22486371
• Journal Information: Applied Physics Letters, Vol. 107, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE TRANSPORT
DOPED MATERIALS
ELECTRONS
HOLES
IRIDIUM
LAYERS
LEAKS
LIFETIME
LIGHT EMITTING DIODES
RADIATIVE DECAY
THERMAL DEGRADATION