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Title: Transmission type flat-panel X-ray source using ZnO nanowire field emitters

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4938006· OSTI ID:22486246
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  1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275 (China)
  2. The First Affiliated Hospital, Sun Yat-sen University, Guangzhou 510275 (China)

A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

OSTI ID:
22486246
Journal Information:
Applied Physics Letters, Vol. 107, Issue 24; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English