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Title: Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}

Abstract

We have investigated the effect of Ru doping the SrTiO{sub 3} (STO) side of the LaAlO{sub 3}/STO (LAO/STO) interface. The metallic behavior at the interface is remarkably robust to defects and disorder. Despite spin moment contribution from Ru ions, we see no evidence of magnetic ordering at the Ti L{sub 3},{sub 2} edge in either doped or undoped interfaces using X-ray magnetic circular dichroism. Magnetotransport measurements also do not show any evidence of magnetic scattering beyond that observed in undoped LAO/STO interfaces. Insertion of more than 7 unit cells of Ru doped STO at the interface suppresses metallic conductivity with a surprisingly sharp metal insulator transition. A similar metal-insulator transition is observed when a homoepitaxial STO film is grown on the single crystal substrate before LAO deposition. Together, our results indicate that ferromagnetism is not intrinsic to the interface, magnetic Ru dopants are not significant sources of scattering, and that cation vacancy formation alone cannot explain the insulating behavior observed in thick homoepitaxial LAO/STO/STO bilayers.

Authors:
;  [1]; ; ;  [2]
  1. Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
  2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22486229
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; CATIONS; DEPOSITION; DOPED MATERIALS; FERROMAGNETISM; FILMS; INTERFACES; LANTHANUM OXIDES; LAYERS; MAGNETIC CIRCULAR DICHROISM; MAGNETIZATION; MONOCRYSTALS; PHASE TRANSFORMATIONS; RUTHENIUM IONS; SCATTERING; SPIN; STRONTIUM TITANATES; SUBSTRATES; VACANCIES; X RADIATION

Citation Formats

Gray, M. T., E-mail: mattgray@stanford.edu, Sanders, T. D., Suzuki, Y., Jenkins, C. A., Shafer, P., and Arenholz, E. Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}. United States: N. p., 2015. Web. doi:10.1063/1.4938133.
Gray, M. T., E-mail: mattgray@stanford.edu, Sanders, T. D., Suzuki, Y., Jenkins, C. A., Shafer, P., & Arenholz, E. Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}. United States. doi:10.1063/1.4938133.
Gray, M. T., E-mail: mattgray@stanford.edu, Sanders, T. D., Suzuki, Y., Jenkins, C. A., Shafer, P., and Arenholz, E. Mon . "Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}". United States. doi:10.1063/1.4938133.
@article{osti_22486229,
title = {Electronic and magnetic phenomena at the interface of LaAlO{sub 3} and Ru doped SrTiO{sub 3}},
author = {Gray, M. T., E-mail: mattgray@stanford.edu and Sanders, T. D. and Suzuki, Y. and Jenkins, C. A. and Shafer, P. and Arenholz, E.},
abstractNote = {We have investigated the effect of Ru doping the SrTiO{sub 3} (STO) side of the LaAlO{sub 3}/STO (LAO/STO) interface. The metallic behavior at the interface is remarkably robust to defects and disorder. Despite spin moment contribution from Ru ions, we see no evidence of magnetic ordering at the Ti L{sub 3},{sub 2} edge in either doped or undoped interfaces using X-ray magnetic circular dichroism. Magnetotransport measurements also do not show any evidence of magnetic scattering beyond that observed in undoped LAO/STO interfaces. Insertion of more than 7 unit cells of Ru doped STO at the interface suppresses metallic conductivity with a surprisingly sharp metal insulator transition. A similar metal-insulator transition is observed when a homoepitaxial STO film is grown on the single crystal substrate before LAO deposition. Together, our results indicate that ferromagnetism is not intrinsic to the interface, magnetic Ru dopants are not significant sources of scattering, and that cation vacancy formation alone cannot explain the insulating behavior observed in thick homoepitaxial LAO/STO/STO bilayers.},
doi = {10.1063/1.4938133},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 107,
place = {United States},
year = {2015},
month = {12}
}