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Title: Phonon bottleneck in p-type Ge/Si quantum dots

Abstract

We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

Authors:
;  [1]; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22486135
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; CURRENTS; ELECTRONS; GAIN; HOLES; MOLECULAR BEAM EPITAXY; PHONONS; PROBABILITY; QUANTUM DOTS; SCATTERING

Citation Formats

Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V., and Novosibirsk State University, 630090 Novosibirsk. Phonon bottleneck in p-type Ge/Si quantum dots. United States: N. p., 2015. Web. doi:10.1063/1.4936340.
Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V., & Novosibirsk State University, 630090 Novosibirsk. Phonon bottleneck in p-type Ge/Si quantum dots. United States. doi:10.1063/1.4936340.
Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Armbrister, V. A., Bloshkin, A. A., Dvurechenskii, A. V., and Novosibirsk State University, 630090 Novosibirsk. Mon . "Phonon bottleneck in p-type Ge/Si quantum dots". United States. doi:10.1063/1.4936340.
@article{osti_22486135,
title = {Phonon bottleneck in p-type Ge/Si quantum dots},
author = {Yakimov, A. I., E-mail: yakimov@isp.nsc.ru and Tomsk State University, 634050 Tomsk and Kirienko, V. V. and Armbrister, V. A. and Bloshkin, A. A. and Dvurechenskii, A. V. and Novosibirsk State University, 630090 Novosibirsk},
abstractNote = {We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.},
doi = {10.1063/1.4936340},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}