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Title: Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

Abstract

Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

Authors:
; ; ; ;  [1]
  1. Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)
Publication Date:
OSTI Identifier:
22486131
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; BORON NITRIDES; COBALT; GRAPHENE; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PLASMA; SCANNING ELECTRON MICROSCOPY; SHAPE; SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Xu, Zhongguang, Zheng, Renjing, Khanaki, Alireza, Zuo, Zheng, and Liu, Jianlin. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4936378.
Xu, Zhongguang, Zheng, Renjing, Khanaki, Alireza, Zuo, Zheng, & Liu, Jianlin. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy. United States. doi:10.1063/1.4936378.
Xu, Zhongguang, Zheng, Renjing, Khanaki, Alireza, Zuo, Zheng, and Liu, Jianlin. Mon . "Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy". United States. doi:10.1063/1.4936378.
@article{osti_22486131,
title = {Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy},
author = {Xu, Zhongguang and Zheng, Renjing and Khanaki, Alireza and Zuo, Zheng and Liu, Jianlin},
abstractNote = {Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.},
doi = {10.1063/1.4936378},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}