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Title: A two-in-one process for reliable graphene transistors processed with photo-lithography

Abstract

Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During this deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.

Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
22486096
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 20; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL ANALYSIS; DEPOSITION; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRON BEAMS; FABRICATION; FIELD EFFECT TRANSISTORS; GRAPHENE; POLYMERS; PROCESSING; SILICON; SURFACES

Citation Formats

Ahlberg, P., Hinnemo, M., Song, M., Gao, X., Olsson, J., Zhang, S. -L., and Zhang, Z.-B., E-mail: zhibin.zhang@angstrom.uu.se. A two-in-one process for reliable graphene transistors processed with photo-lithography. United States: N. p., 2015. Web. doi:10.1063/1.4935985.
Ahlberg, P., Hinnemo, M., Song, M., Gao, X., Olsson, J., Zhang, S. -L., & Zhang, Z.-B., E-mail: zhibin.zhang@angstrom.uu.se. A two-in-one process for reliable graphene transistors processed with photo-lithography. United States. doi:10.1063/1.4935985.
Ahlberg, P., Hinnemo, M., Song, M., Gao, X., Olsson, J., Zhang, S. -L., and Zhang, Z.-B., E-mail: zhibin.zhang@angstrom.uu.se. Mon . "A two-in-one process for reliable graphene transistors processed with photo-lithography". United States. doi:10.1063/1.4935985.
@article{osti_22486096,
title = {A two-in-one process for reliable graphene transistors processed with photo-lithography},
author = {Ahlberg, P. and Hinnemo, M. and Song, M. and Gao, X. and Olsson, J. and Zhang, S. -L. and Zhang, Z.-B., E-mail: zhibin.zhang@angstrom.uu.se},
abstractNote = {Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During this deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.},
doi = {10.1063/1.4935985},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}