Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

Journal Article · Mon Nov 09 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935602· OSTI ID:22486061

Xia, Congxin; Xue, Bin; Wang, Tianxing; Peng, Yuting ^[1]; Jia, Yu ^[2]

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1. Department of Physic, Henan Normal University, Xinxiang 453007 (China)
2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

• OSTI ID: 22486061
• Journal Information: Applied Physics Letters, Vol. 107, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COUPLING
DISPERSION RELATIONS
DISTANCE
EV RANGE
FERMI LEVEL
GRAPHENE
VAN DER WAALS FORCES