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Title: Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

Abstract

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

Authors:
; ; ;  [1];  [2]
  1. Department of Physic, Henan Normal University, Xinxiang 453007 (China)
  2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)
Publication Date:
OSTI Identifier:
22486061
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COUPLING; DISPERSION RELATIONS; DISTANCE; EV RANGE; FERMI LEVEL; GRAPHENE; VAN DER WAALS FORCES

Citation Formats

Xia, Congxin, E-mail: xiacongxin@htu.edu.cn, Xue, Bin, Wang, Tianxing, Peng, Yuting, and Jia, Yu. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures. United States: N. p., 2015. Web. doi:10.1063/1.4935602.
Xia, Congxin, E-mail: xiacongxin@htu.edu.cn, Xue, Bin, Wang, Tianxing, Peng, Yuting, & Jia, Yu. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures. United States. doi:10.1063/1.4935602.
Xia, Congxin, E-mail: xiacongxin@htu.edu.cn, Xue, Bin, Wang, Tianxing, Peng, Yuting, and Jia, Yu. 2015. "Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures". United States. doi:10.1063/1.4935602.
@article{osti_22486061,
title = {Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures},
author = {Xia, Congxin, E-mail: xiacongxin@htu.edu.cn and Xue, Bin and Wang, Tianxing and Peng, Yuting and Jia, Yu},
abstractNote = {The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.},
doi = {10.1063/1.4935602},
journal = {Applied Physics Letters},
number = 19,
volume = 107,
place = {United States},
year = 2015,
month =
}