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Title: Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

Abstract

Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

Authors:
; ;  [1];  [1];  [2];  [1];  [2];  [3]
  1. Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright Patterson AFB, Ohio 45433 (United States)
  2. (United States)
  3. Department of Electrical and Computer Engineering, University of Alabama in Huntsville, 301 Sparkman Drive, Huntsville, Alabama 35899 (United States)
Publication Date:
OSTI Identifier:
22486043
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ANNEALING; DOPED MATERIALS; FILMS; GALLIUM; GRATINGS; PERIODICITY; PERMITTIVITY; PLASMONS; SIMULATION; SPLIT-RING RESONATORS; VISIBLE RADIATION; WAVELENGTHS; ZINC OXIDES

Citation Formats

Hendrickson, Joshua R., E-mail: joshua.hendrickson.4@us.af.mil, Leedy, Kevin, Cleary, Justin W., Vangala, Shivashankar, SURVICE Engineering, 4141 Colonel Glenn Highway, Dayton, Ohio 45431, Nader, Nima, Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060, and Guo, Junpeng. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film. United States: N. p., 2015. Web. doi:10.1063/1.4935219.
Hendrickson, Joshua R., E-mail: joshua.hendrickson.4@us.af.mil, Leedy, Kevin, Cleary, Justin W., Vangala, Shivashankar, SURVICE Engineering, 4141 Colonel Glenn Highway, Dayton, Ohio 45431, Nader, Nima, Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060, & Guo, Junpeng. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film. United States. doi:10.1063/1.4935219.
Hendrickson, Joshua R., E-mail: joshua.hendrickson.4@us.af.mil, Leedy, Kevin, Cleary, Justin W., Vangala, Shivashankar, SURVICE Engineering, 4141 Colonel Glenn Highway, Dayton, Ohio 45431, Nader, Nima, Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060, and Guo, Junpeng. Mon . "Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film". United States. doi:10.1063/1.4935219.
@article{osti_22486043,
title = {Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film},
author = {Hendrickson, Joshua R., E-mail: joshua.hendrickson.4@us.af.mil and Leedy, Kevin and Cleary, Justin W. and Vangala, Shivashankar and SURVICE Engineering, 4141 Colonel Glenn Highway, Dayton, Ohio 45431 and Nader, Nima and Solid State Scientific Corporation, 12 Simon St., Nashua, New Hampshire 03060 and Guo, Junpeng},
abstractNote = {Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.},
doi = {10.1063/1.4935219},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}