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Title: Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

Abstract

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.

Authors:
 [1]; ;  [2];  [2];  [1]
  1. Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany)
  2. Télécom Paristech, Université Paris-Saclay, 46 rue Barrault, CNRS LTCI 75634 Paris Cedex 13 (France)
Publication Date:
OSTI Identifier:
22486035
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; EFFICIENCY; FEEDBACK; FREQUENCY MIXING; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; MODULATION; QUANTUM DOTS; SIGNAL-TO-NOISE RATIO; VAPOR PHASE EPITAXY

Citation Formats

Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de, Arsenijević, D., Huang, H., Schires, K., Grillot, F., Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 1313, Bimberg, D., and King Abdulaziz University, 22254 Jeddah. Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm. United States: N. p., 2015. Web. doi:10.1063/1.4935796.
Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de, Arsenijević, D., Huang, H., Schires, K., Grillot, F., Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 1313, Bimberg, D., & King Abdulaziz University, 22254 Jeddah. Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm. United States. doi:10.1063/1.4935796.
Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de, Arsenijević, D., Huang, H., Schires, K., Grillot, F., Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 1313, Bimberg, D., and King Abdulaziz University, 22254 Jeddah. Mon . "Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm". United States. doi:10.1063/1.4935796.
@article{osti_22486035,
title = {Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm},
author = {Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de and Arsenijević, D. and Huang, H. and Schires, K. and Grillot, F. and Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 1313 and Bimberg, D. and King Abdulaziz University, 22254 Jeddah},
abstractNote = {This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.},
doi = {10.1063/1.4935796},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}