Damage free Ar ion plasma surface treatment on In{sub 0.53}Ga{sub 0.47}As-on-silicon metal-oxide-semiconductor device
- Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 (United States)
- SK Hynix, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1 (Korea, Republic of)
- SEMATECH Inc., 257 Fuller Rd #2200, Albany, New York 12203 (United States)
- Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 702-701 (Korea, Republic of)
In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In{sub 0.53}Ga{sub 0.47}As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In{sub 0.53}Ga{sub 0.47}As. The XPS spectra of Ar treated In{sub 0.53}Ga{sub 0.47}As show a decrease in the AsO{sub x} and GaO{sub x} signal intensities, and the MOSCAPs show higher accumulation capacitance (C{sub acc}), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (D{sub it}), which thereby led to a reduction in the threshold voltage (V{sub th}) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.
- OSTI ID:
- 22486020
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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