Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
- NAsP_I_I_I_/_V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)
- Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)
- College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)
The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a “W”-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.
- OSTI ID:
- 22485992
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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