skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4935212· OSTI ID:22485992
; ; ; ; ; ; ; ; ;  [1];  [2]; ;  [3]
  1. NAsP_I_I_I_/_V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)
  2. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)
  3. College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

The excitonic transitions of the type-II (GaIn)As/Ga(AsSb) gain medium of a “W”-laser structure are characterized experimentally by modulation spectroscopy and analyzed using microscopic quantum theory. On the basis of the very good agreement between the measured and calculated photoreflectivity, the type-I or type-II character of the observable excitonic transitions is identified. Whereas the energetically lowest three transitions exhibit type-II character, the subsequent energetically higher transitions possess type-I character with much stronger dipole moments. Despite the type-II character, the quantum-well structure exhibits a bright luminescence.

OSTI ID:
22485992
Journal Information:
Applied Physics Letters, Vol. 107, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English